26 June 1992 High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron
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Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992); doi: 10.1117/12.59156
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
High-power large-optical-cavity (LOC) InGaAsP-InP lasers emitting at 1.55 micron were prepared by using a proper LPE growth technique. Long-lived LOC lasers with the output power higher than 2 W in pulsed operation at room temperature were fabricated, with the threshold currents as low as Jth = 2.7 KA/sq cm or less and temperature stability as high as T0 of 130 K.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingchang Zhong, Ronghui Li, Baoren Zhu, Yingjie Zhao, "High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59156; https://doi.org/10.1117/12.59156
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KEYWORDS
Lab on a chip

Laser stabilization

Temperature metrology

Laser damage threshold

Pulsed laser operation

High power lasers

Semiconductor lasers

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