26 June 1992 High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron
Author Affiliations +
Abstract
High-power large-optical-cavity (LOC) InGaAsP-InP lasers emitting at 1.55 micron were prepared by using a proper LPE growth technique. Long-lived LOC lasers with the output power higher than 2 W in pulsed operation at room temperature were fabricated, with the threshold currents as low as Jth = 2.7 KA/sq cm or less and temperature stability as high as T0 of 130 K.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingchang Zhong, Ronghui Li, Baoren Zhu, Yingjie Zhao, "High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 micron", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59156; https://doi.org/10.1117/12.59156
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT

High power DFB laser diodes
Proceedings of SPIE (February 17 2010)
High-power pulsed 976-nm DFB laser diodes
Proceedings of SPIE (April 28 2010)
Reliability Of Ingaasp Semiconductor Lasers
Proceedings of SPIE (January 01 1987)

Back to Top