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26 June 1992 High-power, optically pumped, pulsed InGaAs/GaAs vertical-cavity surface-emitting semiconductor laser with resonant periodic gain at 918 nm
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Abstract
An InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) with resonant periodic gain (RPG) was optically pumped using a pulsed dye laser at 760 nm with 500 ns pulse width. Output pulse energies at 918 nm in excess of 20 mJ were observed from a 3.3 mm diameter lasing spot. This corresponds to an efficiency of greater than 20%. Approximate area scaling of threshold and maximum available output power (limited by the optical pumping damage threshold) was demonstrated.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheryl J. White, Alan H. Paxton, John Gerard McInerney, and Christian F. Schaus "High-power, optically pumped, pulsed InGaAs/GaAs vertical-cavity surface-emitting semiconductor laser with resonant periodic gain at 918 nm", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59126
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