26 June 1992 High-power single-frequency 980-nm diode lasers
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Abstract
The design, fabrication, and characteristics of high power 980 nm strained layer lasers will be described in detail. These lnGaAs/GaAs ridge waveguide lasers show excellent optical beam quality with total fundamental mode powers of approximately 200 mW. Cavity losses are less than 3 cm1 , and internal efficiencies approach 1 00%. Single frequency operation is typically observed for these lasers, and side mode suppression ratios of 30 dB and linewidths of 2 MHz are common.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert B. Lauer, Robert B. Lauer, } "High-power single-frequency 980-nm diode lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59145; https://doi.org/10.1117/12.59145
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