26 June 1992 High-power single-mode strained-layer lasers emitting at 980 nm
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Abstract
Highpower single mode InGaAs lasers for emitting at 980mn have been developed. Life test data and failure analysis results are discussed. Coupling efficiency into single mode fiber as a function of beam ellipticity is also studied.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hal A. Zarem, Hal A. Zarem, Joel S. Paslaski, Joel S. Paslaski, Michael Mittelstein, Michael Mittelstein, Jeffrey E. Ungar, Jeffrey E. Ungar, Israel Ury, Israel Ury, } "High-power single-mode strained-layer lasers emitting at 980 nm", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59146; https://doi.org/10.1117/12.59146
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