26 June 1992 Injection laser active Q-switching due to free-carrier effets in a single modulation-doped quantum well
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Abstract
Free carrier effects in a modulation-doped GaAs QW placed in the n-region of a p-n junction were successfully used to obtain active Q-switching in a two-section GaAs/AIGaAs DH laser structure. The modulator-section uses the blue shift of the QW absorption edge due to band filling by a 2D electron gas which concentration could be controlled between 0 and 8 x 1011 cm2 by external bias voltage. Only about 100 mV of the modulating voltage was necessary to provide stable active Q-switching. The threshold injection current density ranged from 400 to 800 A/cm2 .The modulation bandwidth estimated to be not less than 4 -5 GHz. A simple electrostatic model is suggested to describe electrooptical phenomena in a modulation-doped QW which underlie the operation of the device.
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Vitali S. Kalinovsky, I. Y. Shvechikov, T. V. Shubina, Alexei A. Toropov, "Injection laser active Q-switching due to free-carrier effets in a single modulation-doped quantum well", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59164; https://doi.org/10.1117/12.59164
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