Laser assisted etching to fabricate a buried continuous graded cavity for unstable semiconductor laser diodes

Michael S. Allen; Salvador Guel-Sandoval; John Gerard McInerney

doi:10.1117/12.59173

26 June 1992 Laser-assisted etching to fabricate a buried continuous-graded cavity for unstable semiconductor laser diodes

Michael S. Allen, Salvador Guel-Sandoval, John Gerard McInerney

Author Affiliations +

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59173
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

We have developed a method to etch Ill-V semiconductor materials to produce a parabolic cross sectioned channel. Laser-assisted wet-chemical etching has been used to produce channels 20 to 200 p.m wide, with a corresponding center depth of 0.1 to 0.5 .tm. We will discuss recent experimental results of etching n-type gallium arsenide (GaAs). Future considerations include the fabrication of antiguided wide-stripe laser diodes using this procedure.

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Michael S. Allen, Salvador Guel-Sandoval, and John Gerard McInerney "Laser-assisted etching to fabricate a buried continuous-graded cavity for unstable semiconductor laser diodes", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59173

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