Mid-IR HgCdTe double heterostructure lasers

Ricardo R. Zucca; Majid Zandian; Jose M. Arias; Rodolfo Victor Gil; Jasprit Singh

doi:10.1117/12.59133

26 June 1992 Mid-IR HgCdTe double heterostructure lasers

Ricardo R. Zucca, Majid Zandian, Jose M. Arias, Rodolfo Victor Gil, Jasprit Singh

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59133
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

The fabrication and characteristics of the first Hg(1-x)Cd(x)Te double heterostructure mid-IR injection laser (Zandian et al., 1991) are described in detail, and new results on an expanded range of operation of this laser are presented. Three new double heterostructures were grown, which all produced working lasers operating under pulsed current at temperatures between 40 and 90 K. At 77 K, their emission wavelengths were 2.9, 3.4, and 3.9 microns; the lowest threshold current density measured was 521 A/sq cm, very close to that predicted by a numerical calculation.

Citation Download Citation

Ricardo R. Zucca, Majid Zandian, Jose M. Arias, Rodolfo Victor Gil, and Jasprit Singh "Mid-IR HgCdTe double heterostructure lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59133

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