26 June 1992 Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells
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Abstract
We describe 2.5Mm wide Ridge Waveguide Lasers emitting in the wavelength range 1045nm-1065nm. These are fabricated from strained layer single quantum well epitaxial heterostructures with 30%-31% InAs in the quantum well. The devices exhibit stable single spatial mode, single spectral line operation over a wide range of output power and temperature. Preliminary data suggests that reliable high power CW operation may be obtained.
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Richard F. Murison, Shuyen R. Lee, Michael J. Brown, Nigel Holehouse, Alan H. Moore, Timothy M. Cockerill, James J. Coleman, "Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59147; https://doi.org/10.1117/12.59147
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