Reliability of wide bandgap semiconductor diode lasers

Steven L. Yellen; Robert G. Waters; Harvey B. Serreze; Allan H. Shepard; John A. Baumann; Richard J. Dalby

doi:10.1117/12.59141

26 June 1992 Reliability of wide bandgap semiconductor diode lasers

Steven L. Yellen, Robert G. Waters, Harvey B. Serreze, Allan H. Shepard, John A. Baumann, Richard J. Dalby

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59141
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Research into new material systems to both extend the operating wavelength and improve the performance of the GaAs/AlGaAs material system has led to several insights into the reliability of wide bandgap (E(g) greater than 1eV) semiconductor lasers. Strained InGaAs lasers, operating in the wavelength range 0.9-1.1 micron, have eliminated sudden failures and exhibited very low gradual degradation rates. Strained InAlGaAs lasers, a possible replacement for AlGaAs lasers at 0.8 micron have shown the potential to both eliminate sudden failures and improve gradual degradation as compared to AlGaAs lasers. Finally, visible GaInP lasers, operating at 0.65 micron, have eliminated sudden failures and exhibited surprising gradual degradation characteristics for lasers operating at modest efficiencies. Specific results and subsequent conclusions with the supporting life test characteristics and failure analysis are contained in this work.

Citation Download Citation

Steven L. Yellen, Robert G. Waters, Harvey B. Serreze, Allan H. Shepard, John A. Baumann, and Richard J. Dalby "Reliability of wide bandgap semiconductor diode lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59141

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