9 June 1992 Improved wavelength stability of GaAs laser diodes under amplitude modulation
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Spectral properties of commercially available Fabry-Perot and distributed Bragg reflector (DBR) GaAlAs and InGaAs laser diodes operating under deep current modulation are presented. At kHz modulation frequencies spectral widths of commercial diodes are 2.5 nm 15 dB down from the maximum intensity. Structural modifications can narrow this value to 0.4 nm. Prototype DBR devices with maximum output power of 110 mW exhibit extremely narrow CW linewidths of 4 MHz, and are suitable for coherent communication as well as direct detection communication formats.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William J. Gignac, William J. Gignac, Richard R. Craig, Richard R. Craig, Stephen O'Brien, Stephen O'Brien, David G. Mehuys, David G. Mehuys, David F. Welch, David F. Welch, Donald R. Scifres, Donald R. Scifres, } "Improved wavelength stability of GaAs laser diodes under amplitude modulation", Proc. SPIE 1635, Free-Space Laser Communication Technologies IV, (9 June 1992); doi: 10.1117/12.59285; https://doi.org/10.1117/12.59285

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