1 June 1992 GaAsP photocathode with 40% QE at 550 nm
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We have fabricated 18mm format vacuum photodiodes incorporating GaAsP/A1GaAsP photocathodes (Eg 8eV) with P-20 phosphor screens. The photocathode response peaks at approximately 550nm. The quantum efficiency at 550nm is in excess of 55 (electrons per incident photon). The photocathode dark current for these tubes is less than i014 Amps/cm2 at room temperature. We have compared this cathode with the GaAs/AlGaAs photocathode.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John P. Edgecumbe, John P. Edgecumbe, Verle W. Aebi, Verle W. Aebi, Gary A. Davis, Gary A. Davis, } "GaAsP photocathode with 40% QE at 550 nm", Proc. SPIE 1655, Electron Tubes and Image Intensifiers, (1 June 1992); doi: 10.1117/12.60336; https://doi.org/10.1117/12.60336

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