12 August 1992 High-resolution Schottky barrier infrared image sensor
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Abstract
We have developed a series of Schottky-barrier infrared image sensors with a novel readout architecture called the charge sweep device (CSD). Compared with the conventional interline transfer CCD image sensor, the CSD image sensor has a larger charge handling capacity and is suitable for thermal imaging where we have to detect a small signal in a large background. This paper describes the design and performance of the CSD image sensors. The devices described here include a 512x512 element IRCSD, a small size 256x256 element IRCSD, a 256x256 element IRCSD which has the lowest noise equivalent temperature difference of 0.036K (f/1.2), and a 1040x1040 element IRCSD which is the highest resolution device among infrared image sensors.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Kimata, Naoki Yutani, Natsuro Tsubouchi, "High-resolution Schottky barrier infrared image sensor", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); doi: 10.1117/12.135900; https://doi.org/10.1117/12.135900
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