12 August 1992 Recent advances in short-wavelength AR coatings for thinned CCDs
Author Affiliations +
Abstract
This paper discusses the development of two materials as AR coatings for thinned backilluminated charge-coupled devices. The first material is the heavy metal oxide Ta205 deposited as a spin on layer using sol-gel technology. The second material is Si3N4. Both these films have the high index of refraction and low absorption coefficients needed to produce good AR coatings in the near UV down to 300 nm. The goal of the program was to produce a coating which would yield devices with quantum efficiencies of greater than 50 at 300 nm. Both these materials satisfy this goal. Data on test devices will be reported. . 1.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morley Blouke, Morley Blouke, Michael D. Nelson, Michael D. Nelson, M. Serra, M. Serra, Andre Knoesen, Andre Knoesen, B. Higgins, B. Higgins, W. Alan Delamere, W. Alan Delamere, Gary L. Womack, Gary L. Womack, James S. Flores, James S. Flores, T. M. Duncan, T. M. Duncan, R. Reed, R. Reed, } "Recent advances in short-wavelength AR coatings for thinned CCDs", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); doi: 10.1117/12.135928; https://doi.org/10.1117/12.135928
PROCEEDINGS
11 PAGES


SHARE
RELATED CONTENT

A few phenomena on the fully depleted CCDs at the...
Proceedings of SPIE (July 22 2014)
Delta-doped CCDs with integrated UV coatings
Proceedings of SPIE (May 14 2000)
Optimizing quantum efficiency in a stacked CMOS sensor
Proceedings of SPIE (February 16 2011)
Bump-bonded back-illuminated CCDs
Proceedings of SPIE (August 11 1992)
CCD Chemical/Mechanical Thinning Results
Proceedings of SPIE (December 21 1989)

Back to Top