Three-dimensional optical memory employing electron trapping materials

Charles Y. Wrigley; Xiangyang Yang; Joseph Lindmayer; William M. Seiderman

doi:10.1117/12.58501

1 April 1992 Three-dimensional optical memory employing electron trapping materials

Charles Y. Wrigley, Xiangyang Yang, Joseph Lindmayer, William M. Seiderman

Proceedings Volume 1662, Image Storage and Retrieval Systems; (1992) https://doi.org/10.1117/12.58501
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

Electron trapping (ET) materials are novel storage media developed by Quantex. The architecture of a three-dimensional stacked layer optical memory based on ET materials is reported in this paper. Two-dimensional page memories are individually stored in ET layers by properly imaging the page composer onto a specific layer with blue light. To read out data in a specific layer, a slice of IR beam is addressed into the ET layer from the side of the stacked layer media. The addressed ET thin film contains the IR read beam like a slab waveguide. The orange emission corresponding to written page memory at that layer is emitted as a result of the IR stimulation. System design considerations and preliminary experimental results are presented.

Citation Download Citation

Charles Y. Wrigley, Xiangyang Yang, Joseph Lindmayer, and William M. Seiderman "Three-dimensional optical memory employing electron trapping materials", Proc. SPIE 1662, Image Storage and Retrieval Systems, (1 April 1992); https://doi.org/10.1117/12.58501

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KEYWORDS

Optical storage

Image storage

Computer programming

Infrared imaging

Ions

Signal to noise ratio

Transmittance

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