1 April 1992 Three-dimensional optical memory employing electron trapping materials
Author Affiliations +
Electron trapping (ET) materials are novel storage media developed by Quantex. The architecture of a three-dimensional stacked layer optical memory based on ET materials is reported in this paper. Two-dimensional page memories are individually stored in ET layers by properly imaging the page composer onto a specific layer with blue light. To read out data in a specific layer, a slice of IR beam is addressed into the ET layer from the side of the stacked layer media. The addressed ET thin film contains the IR read beam like a slab waveguide. The orange emission corresponding to written page memory at that layer is emitted as a result of the IR stimulation. System design considerations and preliminary experimental results are presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles Y. Wrigley, Charles Y. Wrigley, Xiangyang Yang, Xiangyang Yang, Joseph Lindmayer, Joseph Lindmayer, William M. Seiderman, William M. Seiderman, } "Three-dimensional optical memory employing electron trapping materials", Proc. SPIE 1662, Image Storage and Retrieval Systems, (1 April 1992); doi: 10.1117/12.58501; https://doi.org/10.1117/12.58501

Back to Top