1 April 1992 Three-dimensional optical memory employing electron trapping materials
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Abstract
Electron trapping (ET) materials are novel storage media developed by Quantex. The architecture of a three-dimensional stacked layer optical memory based on ET materials is reported in this paper. Two-dimensional page memories are individually stored in ET layers by properly imaging the page composer onto a specific layer with blue light. To read out data in a specific layer, a slice of IR beam is addressed into the ET layer from the side of the stacked layer media. The addressed ET thin film contains the IR read beam like a slab waveguide. The orange emission corresponding to written page memory at that layer is emitted as a result of the IR stimulation. System design considerations and preliminary experimental results are presented.
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Charles Y. Wrigley, Charles Y. Wrigley, Xiangyang Yang, Xiangyang Yang, Joseph Lindmayer, Joseph Lindmayer, William M. Seiderman, William M. Seiderman, } "Three-dimensional optical memory employing electron trapping materials", Proc. SPIE 1662, Image Storage and Retrieval Systems, (1 April 1992); doi: 10.1117/12.58501; https://doi.org/10.1117/12.58501
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