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13 August 1992 Phase-change media for high linear velocity and high recording density
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Proceedings Volume 1663, Optical Data Storage; (1992)
Event: Optical Data Storage Topical Meeting, 1992, San Jose, CA, United States
Overwrite characteristics have been studied for Ge-Sb-Te phase change media under high linear velocity conditions, ranging from 11.3 m/s to 22.6 m/s, with mark-edge-recording (MER). The Ge1Sb4Te7 recording layer composition was chosen for the rapid cooling structure to obtain a sufficient erase ratio under high linear velocity conditions. The optical optimization for the disk structure and the narrow-grooved substrate have been applied to improve erase characteristics with MER. The optical phase-difference-reproduction (PDR) has been studied to realize a high carrier to noise ratio (C/N). The pulse-width-reduction (PWR) recording compensation has been developed for high recording density. A 44.8 dB C/N was obtained for 0.68 micrometers minimum recording mark length. A -26.8 dB erase ratio was obtained at 22.6 m/s linear velocity.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsunori Ide, Norikazu Ohshima, Shuichi Ohkubo, Mitsuya Okada, and Osamu Okada "Phase-change media for high linear velocity and high recording density", Proc. SPIE 1663, Optical Data Storage, (13 August 1992);


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