Paper
1 July 1992 CdSe: the ideal semiconductor for active matrix displays (Invited Paper)
Thomas Peter Brody
Author Affiliations +
Proceedings Volume 1664, High-Resolution Displays and Projection Systems; (1992) https://doi.org/10.1117/12.60344
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
CdSe was the semiconductor used in the pioneering active matrix work of the 70''s. Today''s active matrix industry has chosen to disregard this material and is concentrating almost exclusively on Si films. This paper shows the historical roots of this decision, which in the author''s opinion has put the industry on a false trail, hindered the full development of the original concept of a fully integrated display subsystem and has resulted in excessive manufacturing cost. Important recent contributions to CdSe TFT technology are reviewed in the paper, followed by a comparison of the critical physical and fabrication parameters of CdSe, (alpha) -Si and poly-Si. These sections present an incontrovertible argument for an industry-wide reconsideration of an unjustly neglected material.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Peter Brody "CdSe: the ideal semiconductor for active matrix displays (Invited Paper)", Proc. SPIE 1664, High-Resolution Displays and Projection Systems, (1 July 1992); https://doi.org/10.1117/12.60344
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Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Amorphous silicon

Semiconductors

Projection systems

Silicon

Electron beam lithography

Liquid crystals

Matrices

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