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1 July 1992 Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays
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Proceedings Volume 1664, High-Resolution Displays and Projection Systems; (1992) https://doi.org/10.1117/12.60342
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
Most high performance active matrix liquid crystal displays, AMLCDs, are controlled by a matrix of thin film transistors (TFTs) at the pixel level. Today, the majority of the commercially available AMLCDs use TFTs built with amorphous (a-Si); however, there is a great interest in polysilicon (p-Si) TFTs (1) because of their ability to form circuits to drive the display''s address lines on the same substrate as the AMLCD. This paper will compare the capability of the two technologies to meet the AMLCD requirements for the foreseeable future.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard H. Bruce, Shinji Morozumi, Michael G. Hack, Alan Lewis, and I-Wei Wu "Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays", Proc. SPIE 1664, High-Resolution Displays and Projection Systems, (1 July 1992); https://doi.org/10.1117/12.60342
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