High-performance CdSe TFT's as drive circuits in A.M. liquid crystal cells

Michael J. Lee; S. W. Wright; C. P. Judge; P. Y. Cheung; R. Wyman

doi:10.1117/12.60397

15 June 1992 High-performance CdSe TFT's as drive circuits in A.M. liquid crystal cells

Michael J. Lee, S. W. Wright, C. P. Judge, P. Y. Cheung, R. Wyman

Proceedings Volume 1665, Liquid Crystal Materials, Devices, and Applications; (1992) https://doi.org/10.1117/12.60397
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

Cadmium selenide devices are reported with mobilities in excess of 200 cm2 v-1 sec-1 and off currents of -14 amps. Shift registers have been fabricated which operate at 1 MHz and buffers with rise times of 2 microsecond(s) ecs when driving a 60 pF load, which make them suitable for driving the rows of high resolution complex displays.

Citation Download Citation

Michael J. Lee, S. W. Wright, C. P. Judge, P. Y. Cheung, and R. Wyman "High-performance CdSe TFT's as drive circuits in A.M. liquid crystal cells", Proc. SPIE 1665, Liquid Crystal Materials, Devices, and Applications, (15 June 1992); https://doi.org/10.1117/12.60397

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