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15 June 1992 High-performance CdSe TFT's as drive circuits in A.M. liquid crystal cells
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Proceedings Volume 1665, Liquid Crystal Materials, Devices, and Applications; (1992) https://doi.org/10.1117/12.60397
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
Cadmium selenide devices are reported with mobilities in excess of 200 cm2 v-1 sec-1 and off currents of -14 amps. Shift registers have been fabricated which operate at 1 MHz and buffers with rise times of 2 microsecond(s) ecs when driving a 60 pF load, which make them suitable for driving the rows of high resolution complex displays.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Lee, S. W. Wright, C. P. Judge, P. Y. Cheung, and R. Wyman "High-performance CdSe TFT's as drive circuits in A.M. liquid crystal cells", Proc. SPIE 1665, Liquid Crystal Materials, Devices, and Applications, (15 June 1992); https://doi.org/10.1117/12.60397
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