9 July 1992 Analysis of diffraction intensities in the Fresnel region for the x-ray lithography process optimization (Poster Paper)
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Abstract
We analyze the behavior of diffraction integral with the Fresnel number of the order of 0.1 to 5, and discuss the effect of diffraction on the pattern transfer in the x-ray proximity printing process. We investigate the cases of an isolated single space and an isolated single line. The diffraction patterns are constructed for various values of F. The width of the pattern is examined as a function of the minimum dose to develop the resist, which is, in turn, a function of the threshold intensity Ith. We search for the range of F in which the linewidth variation is within +/- 10% of its maximum (or minimum) value. Since 1/F is proportional to mask-to-wafer gap z, the widest range of allowed F value can be adopted as an optimum range. The optimum condition satisfying both the cases is found. The results show that there are the optimum ranges of the mask-to-wafer gap depending on either the linewidths of the mask patterns or the system throughput requirement. Our discussion on the diffraction effect is carried out mainly in terms of the Fresnel number.
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Hyung Joun Yoo, Hyung Joun Yoo, } "Analysis of diffraction intensities in the Fresnel region for the x-ray lithography process optimization (Poster Paper)", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136043; https://doi.org/10.1117/12.136043
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