Development of XUV projection lithography at 60-80 nm (Poster Paper)

Brian Emerson Newnam; Vriddhachalam K. Viswanathan

doi:10.1117/12.136044

9 July 1992 Development of XUV projection lithography at 60-80 nm (Poster Paper)

Brian Emerson Newnam, Vriddhachalam K. Viswanathan

Proceedings Volume 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II; (1992) https://doi.org/10.1117/12.136044
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

The rationale, design, component properties, and potential capabilities of extreme-ultraviolet (XUV) projection lithography systems using 60 - 80 nm illumination and single-surface reflectors are described. These systems are evaluated for potential application to high-volume production of future generations of gigabit chips.

Citation Download Citation

Brian Emerson Newnam and Vriddhachalam K. Viswanathan "Development of XUV projection lithography at 60-80 nm (Poster Paper)", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136044

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