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9 July 1992 Electron-beam lithography system for high-precision reticle making
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Abstract
A high precision electron beam lithography systems which can be used to make reticles for 0.3 micrometers devices has been developed. This system is an enhanced model of the Hitachi electron beam lithography system, HL-700M. Key technologies used in this system are (1) the minimum address unit (0.0125 micrometers ) and the stage-positioning measurement unit (0.005 micrometers ) to correspond with higher precision specifications, (2) the refined beam correction functions and (3) the efficient environmental controls. The items of improvement on environmental controls are to design an anti-vibration column and to adopt a reticle temperature control system. The main specifications of this system are (1) the positioning accuracy: 0.06 micrometers , (2) stitching accuracy: 0.05 micrometers , (3) pattern width accuracy: 0.05 micrometers and (4) throughput: 0.5 reticle/hr. The system enables one to write phase shift masks using the direct writing mode in HL-700D.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Matsuzaka, Hiroya Ohta, Norio Saitou, Katsuhiro Kawasaki, Kazumitsu Nakamura, Toshihiko Kohno, and Morihisa Hoga "Electron-beam lithography system for high-precision reticle making", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136009
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