9 July 1992 Focused-ion-beam repair of phase-shift photomasks
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Abstract
Phase-shift photolithography is emerging as an important new technology for sub-half-micron design rule circuits. Unfortunately part of the price paid for the improvements in spatial resolution and process latitude afforded by phase-shift lithography is increased mask defect printing sensitivity. The minimum printable defect size, 0.3 microns (on the mask) for I-line steppers at 0.35 microns, is roughly half that for conventional photomasks. This paper examines the issues associated with extending high resolution focused ion beam mask repair to phase-shift masks.
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Lloyd R. Harriott, Joseph G. Garofalo, Robert L. Kostelak, "Focused-ion-beam repair of phase-shift photomasks", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136031; https://doi.org/10.1117/12.136031
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