9 July 1992 Focused-ion-beam repair of phase-shift photomasks
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Phase-shift photolithography is emerging as an important new technology for sub-half-micron design rule circuits. Unfortunately part of the price paid for the improvements in spatial resolution and process latitude afforded by phase-shift lithography is increased mask defect printing sensitivity. The minimum printable defect size, 0.3 microns (on the mask) for I-line steppers at 0.35 microns, is roughly half that for conventional photomasks. This paper examines the issues associated with extending high resolution focused ion beam mask repair to phase-shift masks.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lloyd R. Harriott, Lloyd R. Harriott, Joseph G. Garofalo, Joseph G. Garofalo, Robert L. Kostelak, Robert L. Kostelak, } "Focused-ion-beam repair of phase-shift photomasks", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136031; https://doi.org/10.1117/12.136031


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