9 July 1992 MEBES IV: a new generation raster-scan electron-beam lithography system
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Abstract
The MEBES IV Electron Beam Lithography System was developed to meet requirements for advanced maskmaking. This necessitates support of 16- and 64-Mbit DRAM production and early development of 256-Mbit DRAMs. Using the original MEBES concepts and Etec's many years of experience with MEBES manufacturing, several major subsystems were redesigned, including the electron beam column and electron source. New test methods and test patterns were also developed to characterize system performance. As a result of the combined efforts of Etec Manufacturing and Engineering, a number of MEBES IV systems have already been built and tested. This paper provides a brief description of the MEBES IV systems. The new test patterns and methods are discussed. System performance data collected during factory acceptance of MEBES IV-LaB6 and -TFE (thermal field emission) systems are also presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank E. Abboud, Frank E. Abboud, John T. Poreda, John T. Poreda, Robert L. Smith, Robert L. Smith, } "MEBES IV: a new generation raster-scan electron-beam lithography system", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136007; https://doi.org/10.1117/12.136007
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