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9 July 1992 Novel surface imaging process with ion-beam lithography and dry development
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Abstract
A new resist processing is presented using the carbonization of organic polymer-based resists due to ion beam exposure and a following dry development under O2-RIE conditions. As an example for this process, a negative tone pattern transfer yielding a structure size down to 50 nm is demonstrated. The influence of the ion exposure dose and the O2-RIE conditions on the pattern transfer are discussed in this paper.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Wolfgang Pilz, L. M. Buchmann, and M. Torkler "Novel surface imaging process with ion-beam lithography and dry development", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136035
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