9 July 1992 Study of single-layer e-beam lithography for x-ray mask making
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Abstract
The possibilities of sub-quarter-micron pattern fabrication by e-beam lithography with single- layer resist was studied on 0.5 micrometers thick W x-ray mask absorber. Calculation was made to evaluate the parameters determining the e-beam dose profile in the resist. It was found that at the incident energy of 40 keV pattern contrast in the resist, whose thickness is 0.2 micrometers , is homogenized through the depth. The experimental result proved that 0.15 micrometers line/space can be resolved by using a high contrast resist with this thickness.
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Yukiko Kikuchi, Yukiko Kikuchi, Yuji Takigami, Yuji Takigami, Ichiro Mori, Ichiro Mori, Yoshio Gomei, Yoshio Gomei, } "Study of single-layer e-beam lithography for x-ray mask making", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136010; https://doi.org/10.1117/12.136010
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