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1 June 1992 Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithography
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Abstract
A chemically amplified silicone-based negative resist, CSNR, composed of an alkali-soluble silicone polymer (ASSP) and an acid generator has been developed for two-layer resist systems. ASSP is obtained by a sol-gel reaction of organotrimethoxysilane and has numerous silanol groups that make it alkali-soluble. The resist chemistry of CSNR is based on the acid- catalyzed condensation of the silanol groups during post-exposure bake (PEB). A 0.5 micrometers - thick CSNR is used as the top imaging layer. The sensitivity (D50) is 30 mJ/cm2 and the (gamma) value is 4. A linear relationship between mask and resist pattern linewidths is maintained down to 0.25 micrometers line and space (l&s) patterns with steep profiles. The CSNR includes silicon atoms in such abundance that it exhibits high resistance to oxygen reactive ion etching (RIE). Using oxygen RIE, two-layer resist processing can be easily accomplished down to 0.22 micrometers l&s patterns with vertical walls.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshio Kawai, Akinobu Tanaka, Hiroshi Ban, Jiro Nakamura, and Tadahito Matsuda "Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithography", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59726
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