Dry development of resist patterns using RIE based on different electrical conductivity

Joachim Bargon; Reinhard R. Baumann; Peter Boeker

doi:10.1117/12.59743

1 June 1992 Dry development of resist patterns using RIE based on different electrical conductivity

Joachim Bargon, Reinhard R. Baumann, Peter Boeker

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Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59743
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Patterns of different electrical conductivity can be converted into three-dimensional lithographic structures taking advantage of differential etching behavior of the electrically conducting versus the insulating areas under reactive ion etching conditions. Particularly suited substrates are intrinsically conducting polymers and composites thereof with common, insulating polymers. Initially, electrically conducting images are obtained via exposure of a photosensitive composite to visible of UV-light, followed by a subsequent (`dry') development step in the vapor of a suited monomer. The electrically conducting areas experience RIE-type etching and thus etch faster in an oxygen plasma than the insulating sections.

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Joachim Bargon, Reinhard R. Baumann, and Peter Boeker "Dry development of resist patterns using RIE based on different electrical conductivity", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59743

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