1 June 1992 Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule
Author Affiliations +
Abstract
Effective parameters of a DESIRE process on lithographic performances were studied. It is known that the silylation profile affects a resist pattern profile after development. Here, the relation between silylation profile and resist performances such as depth of focus (DOF), pattern fidelity, and resolution limit were investigated through functional analysis of exposure, cross-linking, and silylation itself. Based on this, new excimer resists were developed and remarkable large DOF and high resolution were realized. In this paper, we describe a total scheme of silylation and resist performance of novel PLASMASK resist at sub-half to quarter micron rule pattern by using the newest lithographic tools.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Kato, Kazunori Kato, Kazuo Taira, Kazuo Taira, Toshihiko Takahashi, Toshihiko Takahashi, Kenji Yanagihara, Kenji Yanagihara, } "Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59741; https://doi.org/10.1117/12.59741
PROCEEDINGS
14 PAGES


SHARE
RELATED CONTENT


Back to Top