1 June 1992 In-situ IR study of the kinetics of silylation
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Abstract
The paper deals with the in-situ spectrophotometric study of the silylation in order to assess possible mechanisms. The results are used for proving that several pathways can be used for obtaining the sharp concentration front of silicon, a characteristic feature of Case II diffusion. A short review of up-to-date papers concerning the possible mechanisms of diffusion in polymers and their modeling is presented. The results of IR spectrophotometric studies prove that the most important feature observed during silylation, i.e., the linear relationship between silicon uptake and the square root of time, and the steep profile of the silicon concentration front, can be explained in the frame of the classical theory of mass transfer accompanied by instantaneous chemical reactions. A critical discussion regarding the possible relationships for the diffusion coefficient of the silylating agent is presented.
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Dan V. Nicolau, Dan V. Nicolau, Gheorghita Jinescu, Gheorghita Jinescu, Florin Fulga, Florin Fulga, } "In-situ IR study of the kinetics of silylation", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59765; https://doi.org/10.1117/12.59765
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