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1 June 1992 Novel DNQ PACs for high-resolution i-line lithography
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Abstract
The use of i-line lithography for the 16 to 64 Mbit DRAM device generations calls for increased performance of i-line resists. This paper reports on investigations on novel sensitizers for advanced i-line lithography, starting out with a discussion of general design criteria, then discussing methodology and results of a screening phase, and examining in greater detail a small number of selected candidates for which resolution, exposure latitude, and depth-of-focus data were obtained. Finally, a new advanced resist for i-line lithography, AZR 7500, is presented, and its performance is evaluated in terms of the above criteria as well as thermal flow resistance.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Brunsvold, Nicholas K. Eib, Christopher F. Lyons, Steve S. Miura, Marina V. Plat, Ralph R. Dammel, O. B. Evans, M. Dalil Rahman, Dinesh N. Khanna, Sangya Jain, Ping-Hung Lu, and Stanley A. Ficner "Novel DNQ PACs for high-resolution i-line lithography", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59778
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