1 June 1992 Novel chemical amplification positive-resist material for EB lithography
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This paper reports on a novel three-component chemical amplification positive resist system for EB lithography composed of a novolak resin, an acid generator, and a newly synthesized dissolution inhibitor. We synthesized a novel dissolution inhibitor named CP-TBOC (1), which contains a tert-butoxycarbonyl (t-BOC) group and a lactone ring, to obtain resist materials with high sensitivity and high contrast. The t-BOC group of this dissolution inhibitor effectively decomposed by an acid catalyzed thermal reaction as the other conventional dissolution inhibitors. In addition to this decomposition, the lactone ring of the decomposed product was spontaneously cleft in an aqueous base to generate carboxylic acid, further enhancing the solubility to alkaline developers. The subsequent cleavage in an aqueous developer was investigated by UV-visible spectroscopy. The highest EB sensitivity was obtained at a CP-TBOC concentration of approximately 4.7 X 10-4 mol/g.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoko Kihara, Naoko Kihara, Tohru Ushirogouchi, Tohru Ushirogouchi, Tsukasa Tada, Tsukasa Tada, Takuya Naito, Takuya Naito, Satoshi Saito, Satoshi Saito, Osamu Sasaki, Osamu Sasaki, "Novel chemical amplification positive-resist material for EB lithography", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59730; https://doi.org/10.1117/12.59730

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