1 June 1992 Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric
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Abstract
Lithography for via holes in polyimide is conventionally restricted by the need for a thick masking resist due to poor plasma selectivity during pattern transfer. Two novel techniques for via hole definition are described. The first is a single layer masking process using a silicon containing resist, which presents high resistance to oxygen plasma, while the other is a `hard' masking process using spin-on-glass. Processing and characterization for each technique is described and compared with the standard process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin, Neil M. Harper, "Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59769; https://doi.org/10.1117/12.59769
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