1 June 1992 Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric
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Abstract
Lithography for via holes in polyimide is conventionally restricted by the need for a thick masking resist due to poor plasma selectivity during pattern transfer. Two novel techniques for via hole definition are described. The first is a single layer masking process using a silicon containing resist, which presents high resistance to oxygen plasma, while the other is a `hard' masking process using spin-on-glass. Processing and characterization for each technique is described and compared with the standard process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian Martin, Brian Martin, Neil M. Harper, Neil M. Harper, } "Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59769; https://doi.org/10.1117/12.59769
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