Pattern transfer capabilities of CAMP deep-UV resist

Ivan S. Daraktchiev; Dirk Goossens; P. Matthijs; Mark Thirsk; Andrew J. Blakeney; Omkaram Nalamasu; May Cheng

doi:10.1117/12.59748

1 June 1992 Pattern transfer capabilities of CAMP deep-UV resist

Ivan S. Daraktchiev; Dirk Goossens; P. Matthijs; Mark Thirsk; Andrew J. Blakeney; Omkaram Nalamasu; May Cheng;

Author Affiliations +

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59748
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

The work reported here is concerned with using a chemically amplified, positive tone, alkaline developable photoresist for patterning 0.3 - 0.5 (mu) features by exposing with monochromatic light at (lambda) equals 248 nm. More specifically, this class of materials employs tertiarybutoxycarbonyl (t-BOC) protected polyhydroxystyrenesulfone polymer and typically a nitrobenzyl ester photo acid generator, usually referred to as the CAMP resist. Since the lithographic performance of these materials has been already reported, the emphasis of this work falls on the pattern transfer and especially the dry etching/resist stripping steps. As a matter of reference, only an example of the lithographic performance is shown, indicating the starting point for the plasma etching work.

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Ivan S. Daraktchiev, Dirk Goossens, P. Matthijs, Mark Thirsk, Andrew J. Blakeney, Omkaram Nalamasu, May Cheng, "Pattern transfer capabilities of CAMP deep-UV resist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59748; https://doi.org/10.1117/12.59748

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