1 June 1992 Pattern transfer capabilities of CAMP deep-UV resist
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Abstract
The work reported here is concerned with using a chemically amplified, positive tone, alkaline developable photoresist for patterning 0.3 - 0.5 (mu) features by exposing with monochromatic light at (lambda) equals 248 nm. More specifically, this class of materials employs tertiarybutoxycarbonyl (t-BOC) protected polyhydroxystyrenesulfone polymer and typically a nitrobenzyl ester photo acid generator, usually referred to as the CAMP resist. Since the lithographic performance of these materials has been already reported, the emphasis of this work falls on the pattern transfer and especially the dry etching/resist stripping steps. As a matter of reference, only an example of the lithographic performance is shown, indicating the starting point for the plasma etching work.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan S. Daraktchiev, Dirk Goossens, P. Matthijs, Mark Thirsk, Andrew J. Blakeney, Omkaram Nalamasu, May Cheng, "Pattern transfer capabilities of CAMP deep-UV resist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59748; https://doi.org/10.1117/12.59748
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