1 June 1992 Silylation processes for 193-nm lithography using acid-catalyzed resists
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A systematic study of acid-catalyzed resist formulations was used to investigate the mechanism for resist behavior in a 193 nm silylation process. Sensitivities for these resists are higher than that of base resins even when processed without their normal post-exposure bake. To investigate this, resist formulations with different combinations of the constituent components of typical acid-catalyzed resists were evaluated. Both liquid-phase and vapor-phase silylation processes were employed and a range of post-exposure bake temperatures between 100 and 140 degree(s)C were used. The improved sensitivity for the acid-catalyzed resists is not due to heating during the vapor-phase silylation process or during the laser pulse. Instead, evidence was found for a direct crosslinking reaction between phenolic resin groups in the presence of acid without a melamine additive.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark A. Hartney, Mark A. Hartney, James W. Thackeray, James W. Thackeray, } "Silylation processes for 193-nm lithography using acid-catalyzed resists", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59768; https://doi.org/10.1117/12.59768

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