Translator Disclaimer
1 June 1992 Toward the development of a stable chemically amplified DUV positive photoresist
Author Affiliations +
Abstract
This paper reports the initial results of an improved chemically amplified, positive-tone photoresist for use in DUV applications. This photoresist is shown to have the following properties: low absorbance at 248 nm (0.22/micrometers ), high resolution (0.35 micrometers lines and spaces in 1.0 micrometers thick resist), and good environmental stability. The resist did not show evidence of `T-tops' nor did any linewidth change occur over a five hour period.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James W. Thackeray, Diane L. Canistro, Mark Denison, Joseph J. Ferrari, Richard C. Hemond, David R. Medeiros, George W. Orsula, Edward K. Pavelchek, Martha M. Rajaratnam, and Roger F. Sinta "Toward the development of a stable chemically amplified DUV positive photoresist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59722
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top