Characterization of a one-layer overlay standard

Helmut Besser

doi:10.1117/12.59807

1 June 1992 Characterization of a one-layer overlay standard

Helmut Besser

Proceedings Volume 1673, Integrated Circuit Metrology, Inspection, and Process Control VI; (1992) https://doi.org/10.1117/12.59807
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

This paper describes the characterization of a specially designed one-layer overlay wafer by taking measurements on an optical metrology system and the scanning electron microscope, as well as measurements at the 0- and 180-degree rotational positions on the optical system. The characterized wafer was then compared with an overlay standard provided by VLSI Standards Inc. Results are in good agreement and within a few nanometers of nominal values. This characterized wafer is now accepted and used as an in-house standard.

Citation Download Citation

Helmut Besser "Characterization of a one-layer overlay standard", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59807

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