1 June 1992 Characterization of thickness and perfection of multilayer IC metallization films via x-ray interference phenomena
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Abstract
X ray interference, which arises from a coherent interaction between an incident x-ray beam and x rays refracted and reflected from interfaces within a sample, has been used to nondestructively study the film thickness and interface perfection of multilayer IC metallization films. The approach used to measure and analyze the interference patterns is discussed in detail. Results of the analysis are presented on a single Ti layer and an Al/Ti bilayer on Si. Determination of the Ti layer thickness for both samples was found to be self consistently accurate to better than 1%. The layer thickness values are compared and contrasted to the results of RBS analysis on the same samples.
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Simon Bates, Mike Madden, Tommy Hom, "Characterization of thickness and perfection of multilayer IC metallization films via x-ray interference phenomena", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59842; https://doi.org/10.1117/12.59842
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