1 June 1992 Single-level electric testsites for phase-shifting masks
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Abstract
The phase shifting mask technology has quickly progressed from the exploratory phase to a serious development phase. This requires high resolution measurement techniques to quantify experimental results to optimize the designs. This paper describes a set of electrical linewidth measurement testsites which covers all five representative lithographic features in combination of dark-field and light-field patterns, positive and negative resists. The testsites can investigate binary intensity mask, attenuated, alternating, subresolution-assisted, rim, unattenuated, edge, and covered edge phase shifting masks. All testsites can be used with a single-level wafer exposure. There is no need to remove extra shorts or opens induced by uncovered phase shifters.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Burn Jeng Lin, Donald J. Samuels, and Chris A. Spence "Single-level electric testsites for phase-shifting masks", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); doi: 10.1117/12.59795; https://doi.org/10.1117/12.59795
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