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1 June 1992 Color centers photomasks produced by electron-beam lithography
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Abstract
In this paper we discuss the feasibility of using direct electron beam lithography in the production of a new type of photomask suitable for photolithography with both the g mercury line and KrF deep UV lasers. The masking effect is produced by the presence of molecular type defects - color centers - which show strong absorption bands in the visible and deep UV. The centers are created in a superficial layer of Lithium Fluoride (LiF) crystals by direct electron beam irradiation. A simple mask is presented and the photostability of the centers when submitted to various visible and UV photo-transposition steps is studied. The visible absorption band can withstand ~ 1000 exposures while the UV band can be used - 50 times. The use of this material reduces the number of necessary steps in photomask fabrication, eliminating the need for chemical procedures.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raul Almeida Nunes, Sidnei Paciornik, and Luiz C. Scavarda do Carmo "Color centers photomasks produced by electron-beam lithography", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130351
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