1 June 1992 Efficient numerical simulation of high-NA i-line lithography processes
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Numerical algorithms employing the ID imaging model and the 2D wave-guide scattering model were implemented to achieve high speed in simulating high NA i-line processes. The CPU consumption and the range of validity of the models used were discussed. The simulator was applied to study the possibility of imaging 0.35/mi lines and spaces(L/S) utilizing lenses of NA=0.55, 0.60 and 0.65 and single layer resist (SLR) processes.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Min Yuan, Chi-Min Yuan, Steve S. Miura, Steve S. Miura, Nicholas K. Eib, Nicholas K. Eib, } "Efficient numerical simulation of high-NA i-line lithography processes", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130329; https://doi.org/10.1117/12.130329

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