Modeling spray/puddle dissolution processes for DUV acid-hardened resists

John M. Hutchinson; Siddhartha Das; Qi-De Qian; Henry T. Gaw

doi:10.1117/12.130337

1 June 1992 Modeling spray/puddle dissolution processes for DUV acid-hardened resists

John M. Hutchinson, Siddhartha Das, Qi-De Qian, Henry T. Gaw

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130337
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

An investigative study of the dissolution behavior of acid hardened resists (AHR) was undertaken for spray and spray-puddle development processes. A unique tool, the Site Services DSM-100 End-point detection system, is used to measure both spray and puddle dissolution data for a commercially available deep ultra-violet AHR resist, Shipley SNR-248. The DSM allows in- situ measurement of dissolution rate on the wafer chuck and hence allows parameter extraction for modeling spray and puddle processes. The dissolution data for spray and puddle processes was collected across a range of exposure dose and PEB temperature. The development recipe was varied to decouple the contribution of the spray and puddle modes to the overall dissolution characteristics. The mechanisms involved in spray versus puddle dissolution and their impact on process performance metrics have been investigated. The PARMEX photoresist modeling program is used to determine parameters for the spray and for the puddle process. A lumped parameter AHR model developed at Intel was used in iPHOTO for simulation studies.

Citation Download Citation

John M. Hutchinson, Siddhartha Das, Qi-De Qian, and Henry T. Gaw "Modeling spray/puddle dissolution processes for DUV acid-hardened resists", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130337

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KEYWORDS

Signal processing

Data modeling

Semiconducting wafers

Picture Archiving and Communication System

Process modeling

Deep ultraviolet

Lithography

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