Novel 0.2-um i-line lithography using phase-shifting on the substrate

Hiroki Tabuchi; Takayuki Taniguchi; Hiroyuki Moriwaki; Makoto Tanigawa; Keichiro Uda; Keizo Sakiyama

doi:10.1117/12.130359

1 June 1992 Novel 0.2-μm i-line lithography using phase-shifting on the substrate

Hiroki Tabuchi, Takayuki Taniguchi, Hiroyuki Moriwaki, Makoto Tanigawa, Keichiro Uda, Keizo Sakiyama

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130359
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

This paper describes a novel i-line lithography by phase-shifting on the substrate (POST). With POST, 0.2?m resist patterns have been achieved by using an i-line stepper and conventional masks without phase shifters. It was confirmed that fine patterns were formed by the phase-shifting effect in the resist on the substrate. Simulation suggests that POST has a better resolution than a phase-shifting mask. This method consists of simple processes and is expected to be useful in the fabrication of deep-submicron patterns for ULSI.

Citation Download Citation

Hiroki Tabuchi, Takayuki Taniguchi, Hiroyuki Moriwaki, Makoto Tanigawa, Keichiro Uda, and Keizo Sakiyama "Novel 0.2-μm i-line lithography using phase-shifting on the substrate", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130359

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