1 June 1992 Novel 0.2-μm i-line lithography using phase-shifting on the substrate
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Abstract
This paper describes a novel i-line lithography by phase-shifting on the substrate (POST). With POST, 0.2?m resist patterns have been achieved by using an i-line stepper and conventional masks without phase shifters. It was confirmed that fine patterns were formed by the phase-shifting effect in the resist on the substrate. Simulation suggests that POST has a better resolution than a phase-shifting mask. This method consists of simple processes and is expected to be useful in the fabrication of deep-submicron patterns for ULSI.
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Hiroki Tabuchi, Hiroki Tabuchi, Takayuki Taniguchi, Takayuki Taniguchi, Hiroyuki Moriwaki, Hiroyuki Moriwaki, Makoto Tanigawa, Makoto Tanigawa, Keichiro Uda, Keichiro Uda, Keizo Sakiyama, Keizo Sakiyama, } "Novel 0.2-μm i-line lithography using phase-shifting on the substrate", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130359; https://doi.org/10.1117/12.130359
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