1 June 1992 Novel process for phase-shifting mask fabrication
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Abstract
In this new process for phase-shifting mask fabrication, molybdenum silicide (MoSi) is used as an optical shield layer and spin-on glass (SOG) as a phase-shifter layer. Chromium is employed as an etch-stopper during SOG etching. Cr etch-stopper will be removed at the end of tiie process, therefore all optical problems related to an etch-stopper are avoided. This Cr etch-stopper is also useful in inspection and repair of shifter remaining defects. At first, we will describe the fabrication process including the shifter-defect inspection and repair. Secondary, we will discuss the phase-shifting mask accuracy and its influence to the printed resist pattern when using the alternating type phase-shifting mask. Lastly,we will mention the application result of development of lithography for 64Mbit DRAM using this process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haruhiko Kusunose, Haruhiko Kusunose, Satoshi Aoyama, Satoshi Aoyama, Kunihiro Hosono, Kunihiro Hosono, Susumu Takeuchi, Susumu Takeuchi, Shuichi Matsuda, Shuichi Matsuda, Maaike Op de Beeck, Maaike Op de Beeck, Nobuyuki Yoshioka, Nobuyuki Yoshioka, Yaichiro Watakabe, Yaichiro Watakabe, } "Novel process for phase-shifting mask fabrication", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130323; https://doi.org/10.1117/12.130323
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