1 June 1992 Polarization studies with broadband deep-UV lithography
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We have performed a study of TM and TE polarization with a single wavelength and a broadband spectrum (14 nm in width) exposure. We also examined effects of using scalar and vector aerial images, as well as process latitude of the post-exposure baking. We used SNR-248 negative deep-UV resist with an exposure energy of 24 mJ/cm2. The resist thickness employed was 1? over 0.28? silicon oxide over a silicon substrate. A typical line width and space studied ranged from 0.35? to 0.5?.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Birol Kuyel, Birol Kuyel, Eytan Barouch, Eytan Barouch, Uwe Hollerbach, Uwe Hollerbach, Steven A. Orszag, Steven A. Orszag, } "Polarization studies with broadband deep-UV lithography", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130336; https://doi.org/10.1117/12.130336

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