1 June 1992 Polarization studies with broadband deep-UV lithography
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Abstract
We have performed a study of TM and TE polarization with a single wavelength and a broadband spectrum (14 nm in width) exposure. We also examined effects of using scalar and vector aerial images, as well as process latitude of the post-exposure baking. We used SNR-248 negative deep-UV resist with an exposure energy of 24 mJ/cm2. The resist thickness employed was 1? over 0.28? silicon oxide over a silicon substrate. A typical line width and space studied ranged from 0.35? to 0.5?.
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Birol Kuyel, Eytan Barouch, Uwe Hollerbach, Steven A. Orszag, "Polarization studies with broadband deep-UV lithography", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130336; https://doi.org/10.1117/12.130336
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