Process solutions for the global proximity effect on submicron lithography

Daniel Hao-Tien Lee; Ronfu Chu

doi:10.1117/12.130318

1 June 1992 Process solutions for the global proximity effect on submicron lithography

Daniel Hao-Tien Lee, Ronfu Chu

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130318
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Proximity effect, in general, is a major concern for submicron lithography. There are two kinds of proximity effect, i.e. global and local proximity effects, normally observed in the submicron lithography processes. Local proximity effect is occurred as a result of interaction between adjacent patterns, in which elbow rounding and proximity effect between adjacent contact holes are two typical examples. Global proximity effect is as a result of thin film interference of photoresist thickness variation over topography. The critical dimension variation between cell array and periphery patterns is a typical case. In this paper we will discuss several process approaches to the solution of global proximity effect. An optimum process to minimize the global proximity effect will be described.

Citation Download Citation

Daniel Hao-Tien Lee and Ronfu Chu "Process solutions for the global proximity effect on submicron lithography", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130318

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